The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2007

Filed:

Dec. 09, 2005
Applicants:

Hee Sik Park, Chungcheongbuk-do, KR;

Kyeong Bock Lee, Kyeongki-do, KR;

Byung Soo Park, Kyeongki-do, KR;

Inventors:

Hee Sik Park, Chungcheongbuk-do, KR;

Kyeong Bock Lee, Kyeongki-do, KR;

Byung Soo Park, Kyeongki-do, KR;

Assignee:

Hynix Semiconductor Inc, Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory device comprises a first group of dummy memory cells disposed between source selection transistors, which are coupled to a source selection line, and memory cells coupled to a first wordline. The flash memory device further comprises a second group of dummy memory cells disposed between drain selection transistors, which are coupled to a drain selection line, and memory cells coupled to the last wordline. The flash memory device is configured to prevent program disturbance in deselected cell strings and degradation of programming/erasing speeds in a selected cell string.


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