The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Feb. 09, 2004
Mutsumi Suzuki, Kodaira, JP;
Masakazu Sagawa, Inagi, JP;
Toshiaki Kusunoki, Tokorozawa, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An display apparatus arranged in a matrix having plural luminance modulation elements for modulating or do not modulating luminance depending upon application of a voltage of positive or reverse polarity, having plural parallel scanning electrodes and plural parallel data electrodes, in which each luminance modulation element is disposed at an intersection between the scanning electrode and the data electrode, and having first driving means connected to the scanning electrodes and outputting scanning pulses, and second driving means connected to the data electrodes, wherein the scanning electrodes are grouped into those in a selected state applied with a scanning pulse and those other than described above in a non-selected state at a certain time point during the scanning period; the number of the scanning lines in the selected state is n; the scanning lines in the non-selected state are grouped into non-selected state scanning lines at a high impedance state and non-selected state scanning lines at a low impedance state, the high impedance non-selected state scanning lines has higher impedance than the scanning lines in the selected state, and the low impedance non-selected state scanning lines has lower impedance than the high impedance non-selected state scanning lines; and the number of the non-selected state scanning lines at the low impedance state is n×2 or more.