The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2007

Filed:

Apr. 06, 2006
Applicants:

Seiki Gotou, Tokyo, JP;

Akira Inoue, Tokyo, JP;

Akira Ohta, Tokyo, JP;

Inventors:

Seiki Gotou, Tokyo, JP;

Akira Inoue, Tokyo, JP;

Akira Ohta, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high frequency power amplifier includes: a multi-finger transistor including transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits, each resonant circuit being connected between a gate electrode of a respective one of the transistor cells and the input side matching circuit. The resonant circuits resonate at a second harmonic of the operational frequency of the transistor or at a frequency within a predetermined range centered at the second harmonic and act as a short circuit or exhibit low impedance as seen from the gate electrode.


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