The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Nov. 05, 2004
Yang Ju, Sendai, JP;
Yang Ju, Sendai, JP;
Tohoku Techno Arch Co., Ltd., , JP;
Abstract
The present invention relates to measurement of conductivity. A microwave oscillated by an oscillator using a Gunn diode is applied through an isolator, a circulator, and a horn antenna to a silicon wafer. The isolator is used for reducing the standing wave influencing the operation of the instrument. The reflected wave is received by the same horn antenna, detected by a detector connected to the circulator, and outpufted in the form of a voltage. The detector produces an output voltage proportional to the square of the amplitude of an electric field. Since the amplitude of the reflected wave from a silicon wafer is proportional to the absolute value of the reflectance, the output voltage is also proportional to the square of the absolute value of the reflectance. The reflectance is in a certain relationship with the conductivity, the conductivity of the silicon wafer can be determined.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile