The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2007

Filed:

Apr. 01, 2005
Applicants:

Jeffrey Tyhach, Sunnyvale, CA (US);

Bonnie I Wang, Cupertino, CA (US);

Yan Chong, San Jose, CA (US);

Chiakang Sung, Milpitas, CA (US);

Inventors:

Jeffrey Tyhach, Sunnyvale, CA (US);

Bonnie I Wang, Cupertino, CA (US);

Yan Chong, San Jose, CA (US);

Chiakang Sung, Milpitas, CA (US);

Assignee:

Altera Corporation, San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

Improved decoupling capacitor designs and layout schemes are provided that generate high effective capacitance and high area efficiency at higher frequencies than that of previously known decoupling capacitor designs. The improved decoupling capacitor designs utilize transistor gates with shorter channel lengths to reduce the total parasitic resistance of the channel, thereby providing higher effective capacitance at higher frequencies. To enable higher area efficiency of this decoupling capacitor design, excess contacts are replaced with polysilicon in a grid or waffle pattern.


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