The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Mar. 22, 2005
Fumiki Nakano, Yokohama, JP;
Genshiro Kawachi, Yokohama, JP;
Yoshiaki Nakazaki, Yokohama, JP;
Shinzo Tsuboi, Yokohama, JP;
Takahiko Endo, Yokohama, JP;
Tomoya Kato, Yokohama, JP;
Fumiki Nakano, Yokohama, JP;
Genshiro Kawachi, Yokohama, JP;
Yoshiaki Nakazaki, Yokohama, JP;
Shinzo Tsuboi, Yokohama, JP;
Takahiko Endo, Yokohama, JP;
Tomoya Kato, Yokohama, JP;
Advanced LCD Technologies Development Center Co., Ltd., Totsuka-ku, JP;
Abstract
There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.