The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Apr. 01, 2004
Soon-hong Ahn, Suwon-si, KR;
Jung-hwa Lee, Suwon-si, KR;
Soon-Hong Ahn, Suwon-si, KR;
Jung-Hwa Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A semiconductor device includes first, second, and third wells. The first well is connected to a pad to which an external pin is connected and includes a first-type diffusion region that receives a well bias voltage. The second well is adjacent to the first well, and includes an insulating region and a second-type diffusion region outside the insulating region. The third well is adjacent to the second well and includes a first-type diffusion region that receives a first voltage. The insulating region inside the second well along with the first-type well diffusion region of the first well constitute a bipolar junction transistor that cuts off current flowing from the first well to the third well.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile