The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Nov. 07, 2003
Tsutomu Ogihara, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Hideo Nakagawa, Kadoma, JP;
Masaru Sasago, Kadoma, JP;
Tsutomu Ogihara, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Hideo Nakagawa, Kadoma, JP;
Masaru Sasago, Kadoma, JP;
Shin-Etsu Chemical Co. Ltd., Tokyo, JP;
Matsushita Electric Co., Ltd, Osaka, JP;
Abstract
The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R)Si(OR), and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.