The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Jun. 09, 2005
Applicant:
Young Man Cho, Gyeonggi-do, KR;
Inventor:
Young Man Cho, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductors, Inc., Gyeonggi-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a step channel of a semiconductor device is disclosed. The method for forming a step channel of a semiconductor device comprises forming a hard mask layer pattern defining a step channel region on a semiconductor substrate, forming a spacer on a sidewall of the hard mask layer pattern, and simultaneously etching the spacer and a predetermined thickness of the semiconductor substrate using the hard mask layer pattern and the spacer as an etching mask.