The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Oct. 30, 2003
Applicants:
Jeffrey A. West, Dallas, TX (US);
Michael D. Barth, Plano, TX (US);
Steven P. Zuhoski, Rowlett, TX (US);
Inventors:
Jeffrey A. West, Dallas, TX (US);
Michael D. Barth, Plano, TX (US);
Steven P. Zuhoski, Rowlett, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
Doping copper interconnects () with silicon () has been shown to improve Electromigration and Via Stress Migration reliability. After copper () is deposited by electrochemical deposition and chemically-mechanically polished back, doping is achieved by flowing SiHover the copper interconnect () for 0.5 to 5 seconds at a temperature of 325-425° C.