The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Mar. 30, 2005
Nobuo Sasaki, Kawasaki, JP;
Nobuo Sasaki, Kawasaki, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The semiconductor thin film crystallization method comprises the step of forming a semiconductor thin filmover a substratethe step of forming band-shaped portionfor blocking crystal growth of the semiconductor thin film in the semiconductor film or over the semiconductor film; and the step of causing an energy beamof a continuous wave to scan in a direction intersecting the longitudinal direction of the portion for blocking crystal growth. The energy beam is caused to scan, intersecting the portion for blocking the crystal growth, whereby the crystal growth can be interrupted when the application region of the energy beam intersects the portions for blocking the crystal growth. Even when a solid semiconductor thin film which is not patterned in islands is crystallized, the semiconductor thin film of good crystals can be formed with high yields while the film is prevented from peeling.