The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Nov. 15, 2005
Mei-kei Ieong, Wappingers Falls, NY (US);
Thomas Ludwig, Sindelfingen, DE;
Edward J. Nowak, Essex Junction, VT (US);
Qiqing C. Ouyang, Yorktown Heights, NY (US);
Mei-Kei Ieong, Wappingers Falls, NY (US);
Thomas Ludwig, Sindelfingen, DE;
Edward J. Nowak, Essex Junction, VT (US);
Qiqing C. Ouyang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure including a plurality of finFFET devices in which crossing masks are employed in providing a rectangular patterns to define relatively thin Fins along with a chemical oxide removal (COR) process is provided. The present method further includes a step of merging adjacent Fins by the use of a selective silicon-containing material. The present invention also relates to the resultant semiconductor structure that is formed utilizing the method of the present invention.