The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Oct. 24, 2005
Applicant:
Shih-yi Yen, Kaohsiung, TW;
Inventor:
Shih-Yi Yen, Kaohsiung, TW;
Assignee:
Au Optronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating metal oxide semiconductor with lightly doped drain. In the method, the gate electrode, the LDD of the n-type MOS TFT, and the source/drain electrode of the p-type MOS TFT are defined simultaneously in one photolithography step. The contact holes and the source/drain electrode of the n-type MOS TFT are also defined simultaneously in one photolithography step. The invention employs only six photolithography steps to manufacture the metal oxide semiconductor, such as TFT, with lightly doped drain, thereby avoiding alignment errors, further improving yield and increasing throughput.