The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Mar. 11, 2003
Manfred Ruehrig, Eckental, DE;
Ulrich Klostermann, Fontainebleau, FR;
Manfred Ruehrig, Eckental, DE;
Ulrich Klostermann, Fontainebleau, FR;
Infineon Technologies AG, Munich, DE;
Abstract
The invention relates to a method for fabricating a reference layer for MRAM memory cells and an MRAM memory cell equipped with a reference layer of this type. A reference layer of this type comprises two magnetically coupled layers having a different Curie temperature. When cooling from a temperature above the Curie temperature Tof the first layer in an external magnetic field, the magnetization of the second layer is oriented by a second-order phase transition along the field direction of the external magnetic field. Upon further cooling below the Curie temperature Tof the second layer, the latter is oriented antiparallel with respect to the first layer as a result of the antiferromagnetic coupling between the two layers.