The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Dec. 19, 2003
Kateri E. Paul, Everett, MA (US);
William S. Wong, San Carlos, CA (US);
Steven E. Ready, Santa Cruz, CA (US);
René A. Lujan, Sunnyvale, CA (US);
Kateri E. Paul, Everett, MA (US);
William S. Wong, San Carlos, CA (US);
Steven E. Ready, Santa Cruz, CA (US);
René A. Lujan, Sunnyvale, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
A method for performing a liftoff operation involves printing a liftoff pattern using low-resolution patterning techniques to form fine feature patterns. The resulting feature size is defined by the spacing between printed patterns rather than the printed pattern size. By controlling the cross-sectional profile of the printed liftoff pattern, mask structures may be formed from the liftoff operation having beneficial etch-mask aperture profiles. For example, a multi-layer printed liftoff pattern can be used to create converging aperture profiles in a patterned layer. The patterned layer can then be used as an etch mask, where the converging aperture profiles result in desirable diverging etched features.