The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Sep. 28, 2004
Mehmet Aslan, Sunnyvale, CA (US);
Chungwai Benedict NG, Mountain View, CA (US);
Eric Tam, San Jose, CA (US);
Qing Feng Ren, San Jose, CA (US);
Dan D'aquino, Sunnyvale, CA (US);
Mehmet Aslan, Sunnyvale, CA (US);
Chungwai Benedict Ng, Mountain View, CA (US);
Eric Tam, San Jose, CA (US);
Qing Feng Ren, San Jose, CA (US);
Dan D'Aquino, Sunnyvale, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A circuit for temperature sensing provides a bias current to a PN junction, and the PN junction provides a PN junction voltage in response to the bias current. Also, a parasitic resistance may be coupled in series with the PN junction. The circuit for temperature sensing is configured to determine the temperature of the PN junction based on the PN junction voltage. Further, the circuit includes registers which store ηtrim, which is based on the difference between the non-ideality of the PN junction used from a reference PN junction; ΔI, which is based on the difference between a reference bias current and the bias current for the part; Rtrim, which is based the parasitic resistance; and Ntrim, which includes other offsets. The registers may be set during trimming and/or calibration to provide accurate temperature sensing for the parameters employed.