The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Nov. 04, 2005
Dong-hak Shin, Suwon-si, KR;
Dong-Hak Shin, Suwon-si, KR;
Abstract
A semiconductor memory device includes a memory cell array, and first and second boosting voltage generating portions. The first boosting voltage generating portion generates a first driving signal when the semiconductor device operates in an active mode and supplies a boosting voltage that is higher than a power supply voltage to an output terminal in response to the first driving signal. The second boosting voltage generating portion includes a first boosting voltage generator generating a second driving signal when a level of the boosting voltage of the output terminal is below a target level in the active mode and pumping the boosting voltage in response to the second driving signal and a second boosting voltage generator pumping the boosting voltage in response to the first driving signal when first memory cell array blocks are selected and pumping the boosting voltage in response to the second driving signal when second memory cell array blocks are selected.