The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2007

Filed:

Feb. 24, 2005
Applicants:

Toshimi Ikeda, Kawasaki, JP;

Atsushi Hatakeyama, Kawasaki, JP;

Nobutaka Taniguchi, Kawasaki, JP;

Akira Kikutake, Kawasaki, JP;

Kuninori Kawabata, Kawasaki, JP;

Atsushi Takeuchi, Kawasaki, JP;

Inventors:

Toshimi Ikeda, Kawasaki, JP;

Atsushi Hatakeyama, Kawasaki, JP;

Nobutaka Taniguchi, Kawasaki, JP;

Akira Kikutake, Kawasaki, JP;

Kuninori Kawabata, Kawasaki, JP;

Atsushi Takeuchi, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile semiconductor memory device includes a plurality of memory cells holding memory cell information, a plurality of bit lines connected to the plurality of memory cells, the plurality of bit lines including a first bit line conected to a selected one of the plurality of memory cells and a plurality of second bit lines connected to non-selected memory cells, a plurality of reference cells supplying different reference currents respectively, and a read-out circuit, wherein, when reading the memory cell information, the read-out circuit is coupled to the first bit line connected to the selected memory cell and coupled to one of the plurality of reference cells through one of the plurality of second bit lines connected to the non-selected memory cells.


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