The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2007

Filed:

Aug. 26, 2005
Applicants:

Yuuko Yokota, Soraku-gun, JP;

Motoki Ito, Soraku-gun, JP;

Shigehiko Nagamine, Soraku-gun, JP;

Masayuki Funami, Soraku-gun, JP;

Kiyohiro Iioka, Soraku-gun, JP;

Inventors:

Yuuko Yokota, Soraku-gun, JP;

Motoki Ito, Soraku-gun, JP;

Shigehiko Nagamine, Soraku-gun, JP;

Masayuki Funami, Soraku-gun, JP;

Kiyohiro Iioka, Soraku-gun, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

An IDT electrode, and an input electrode sectionand an output electrode sectioneach connecting with the IDT electrodeare formed in a filter region on one main surface of a piezoelectric substrate, and a semiconductor layeris formed on the other main surface opposite to the one main surface of the piezoelectric substrate. The semiconductor layermakes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.


Find Patent Forward Citations

Loading…