The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Dec. 06, 2002
Karl-ernst Ehwald, Frankfurt, DE;
Alexander Fox, Frankfurt, DE;
Dieter Knoll, Frankfurt, DE;
Bernd Heinemann, Frankfurt, DE;
Steffen Marschmayer, Frankfurt, DE;
Katrin Blum, Frankfurt, DE;
Karl-Ernst Ehwald, Frankfurt, DE;
Alexander Fox, Frankfurt, DE;
Dieter Knoll, Frankfurt, DE;
Bernd Heinemann, Frankfurt, DE;
Steffen Marschmayer, Frankfurt, DE;
Katrin Blum, Frankfurt, DE;
Abstract
The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region () which is arranged in parallel relationship to the surface of the semiconductor substrate () and a second substantially polycrystalline and highly doped region () of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer () which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.