The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2007

Filed:

Jun. 22, 2004
Applicant:

Shinichi Nakagawa, Kawasaki, JP;

Inventor:

Shinichi Nakagawa, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

The semiconductor device comprises a gate electrodeformed over a semiconductor substrate, a sidewall spacerformed on the sidewall of the gate electrode, a sidewall spacerformed on the side wall of the gate electrodewith the sidewall spacerformed on, and an oxide filmformed between the sidewall spacerand the sidewall spacer, and the semiconductor substrate. The film thickness of the oxide filmbetween the sidewall spacerand the semiconductor substrateis thinner than the film thickness of the oxide filmbetween the sidewall spacerand the semiconductor substrate


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