The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Oct. 17, 2005
Robert J. Chiu, Santa Clara, CA (US);
Jeffrey P. Patton, Santa Clara, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Robert J. Chiu, Santa Clara, CA (US);
Jeffrey P. Patton, Santa Clara, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Adavnced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain junctions are formed in the semiconductor substrate. Ultra-uniform suicides are formed on the source/drain junctions, and a dielectric layer is deposited above the semiconductor substrate. Contacts are then formed in the dielectric layer to the ultra-uniform silicides.