The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Dec. 15, 2005
Hyun Cheol Koo, Seoul, KR;
Suk Hee Han, Seoul, KR;
Jong Hwa Eom, Seoul, KR;
Joon Yeon Chang, Seoul, KR;
Hyun Jung Yi, Seoul, KR;
Hyun Cheol Koo, Seoul, KR;
Suk Hee Han, Seoul, KR;
Jong Hwa Eom, Seoul, KR;
Joon Yeon Chang, Seoul, KR;
Hyun Jung Yi, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
A spin transistor having wide ON/OFF operation margin and producing less noise is provided. The spin transistor includes a substrate having a channel, a source, a drain and a gate formed on the substrate. The source and the drain are formed to have magnetization directions perpendicular to the length direction of the channel. The ON/OFF operations of the spin transistor can be controlled by generating a spin-orbit coupling induced magnetic field to have a direction parallel or anti-parallel to the magnetization directions of the source and the drain.