The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
May. 07, 2004
Gitti Frey, Haifa, IL;
Kieran John Reynolds, Cambridge, GB;
Henning Sirringhaus, Cambridge, GB;
Richard Henry Friend, Cambridge, GB;
Gitti Frey, Haifa, IL;
Kieran John Reynolds, Cambridge, GB;
Henning Sirringhaus, Cambridge, GB;
Richard Henry Friend, Cambridge, GB;
Cambridge University Technical Services Ltd., Cambridge, GB;
Abstract
A field effect transistor is provided which comprises a gate electrode, a source electrode, a drain electrode, at least one organic semiconducting layer, and a hole transport layer for transferring holes from said source and drain electrodes to said organic semiconducting layer, wherein said hole transport layer comprises a layered metal chalcogenide. Processes for depositing a thin layer of a layered metal dichalcogenide on a substrate and for producing top gate structures on a layered metal chalcogenide layer in the manufacture of field effect transistors according to the invention are also provided.