The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Nov. 19, 2004
Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same
Hai-zhi Song, Kawasaki, JP;
Toshio Ohshima, Middlesex, GB;
Hai-Zhi Song, Kawasaki, JP;
Toshio Ohshima, Middlesex, GB;
Fujitsu Limited, Kawasaki, JP;
Abstract
The method for forming a quantum dot according to the present invention comprises the step of forming an oxide in a dot-shape on the surface of a semiconductor substrate, the step of removing the oxide to form a concavityin the position from which the oxide has been removed, and the step of growing a semiconductor layeron the semiconductor substrate with the concavity formed in to form a quantum dotof the semiconductor layer in the concavity. The concavity is formed in the semiconductor substrate by forming the oxide dot in the surface of the semiconductor substrate and removing the oxide, whereby the concavity can be formed precisely in a prescribed position and in a prescribed size. The quantum dot is grown in such a concavity, whereby the quantum dot can have good quality and can be formed in a prescribed position and in a prescribed size.