The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Aug. 11, 2005
Minh Van Ngo, Fremont, CA (US);
Alexander Nickel, Santa Clara, CA (US);
Hieu Pham, Milpitas, CA (US);
Jean Yang, Sunnyvale, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Minh Van Ngo, Fremont, CA (US);
Alexander Nickel, Santa Clara, CA (US);
Hieu Pham, Milpitas, CA (US);
Jean Yang, Sunnyvale, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method of forming a dielectric between memory cells in a device includes forming multiple memory cells, where a gap is formed between each of the multiple memory cells. The method further includes performing a high density plasma deposition (HDP) process to fill at least a portion of the gap between each of the multiple memory cells with a dielectric material.