The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Jun. 07, 2006
Qiang Guo, Shanghai, CN;
Qiang Guo, Shanghai, CN;
Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
A processing method for the metal surface in a dual damascene manufacturing is applied to a dual damascene semiconductor structure. The dual damascene semiconductor structure has a metal structure and a spin-on-dielectric (SOD) layer formed on the metal structure, wherein the SOD layer has at least one opening exposing a partial surface of the metal structure. Before the opening is filled, the monoxide on the exposed surface is first removed, then the exposed surface is treated by the plasma at an angle inclined to an axis perpendicular to the exposed surface. The processing method provided in the present invention can avoid the exposed surface being damaged by the plasma and improve the adhesion force between the exposed metal surface and the stuff.