The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Mar. 31, 2006
Shunpei Yamazaki, Setagaya, JP;
Akiharu Miyanaga, Hadano, JP;
Toru Mitsuki, Tochigi, JP;
Hisashi Ohtani, Tochigi, JP;
Shunpei Yamazaki, Setagaya, JP;
Akiharu Miyanaga, Hadano, JP;
Toru Mitsuki, Tochigi, JP;
Hisashi Ohtani, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
An insulating filmfor making an under insulating layeris formed on a quartz or semiconductor substrate. Recessestocorresponding to recessestoof the substrateare formed on the surface of the insulating film. The surface of this insulating filmis flattened to form the under insulating layer. By this flattening process, the distance L, L, . . . , Ln between the recessesof the under insulating layeris made 0.3 μm or more, and the depth of the respective recesses is made 10 nm or less. The root-mean-square surface roughness of the surface of the under insulating filmis made 0.3 nm or less. By this, in the recesses, it can be avoided to block crystal growth of the semiconductor thin film, and crystal grain boundaries can be substantially disappeared.