The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Mar. 06, 2006
Chee Hong Choi, Busan, KR;
Chee Hong Choi, Busan, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A capacitor for a semiconductor device includes a first inter metal dielectric layer is disposed on a substrate. A first electrode is disposed on the first inter metal dielectric layer. A second electrode partially overlaps the first electrode. A first dielectric layer is disposed between the first and second electrodes. A third electrode partially overlaps the second electrode. A second dielectric layer is disposed between the second and third electrodes. An etch stop layer is disposed on the first, second, and third electrodes. A second inter metal dielectric layer is formed on the etch stop layer and includes first, second, and third via holes exposing the first and third electrodes and the etch stop layer. First, second, and third plugs are disposed in the first, second, and third via holes.