The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
May. 15, 2002
Masaaki Yuri, Ibaraki, JP;
Masaaki Yuri, Ibaraki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method for manufacturing a semiconductor substrate of the present invention includes the steps of: (a) providing a support substrate; (b) epitaxially growing a first semiconductor layer on the support substrate; (c) epitaxially growing a second semiconductor layer on the first semiconductor layer; and (d) forming a semiconductor substrate including the first semiconductor layer and the second semiconductor layer by removing the support substrate, wherein an interatomic distance of atoms of the support substrate to which atoms of the first semiconductor layer attach and an interatomic distance of atoms of the second semiconductor layer have the same magnitude relationship with respect to an interatomic distance of the atoms of the first semiconductor layer in an epitaxial growth plane.