The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Oct. 22, 2004
Michelle M. L. Fredholm, Hericy, FR;
Jeffrey T. Kohli, Corning, NY (US);
Nicholas Leblond, Painted Post, NY (US);
Alexandre M. Mayolet, Corning, NY (US);
Viktoria Pshenitsyna, St. Petersburg, RU;
Pawan Saxena, Corning, NY (US);
Paul M. Schermerhorn, Painted Post, NY (US);
Michelle M. L. Fredholm, Hericy, FR;
Jeffrey T. Kohli, Corning, NY (US);
Nicholas LeBlond, Painted Post, NY (US);
Alexandre M. Mayolet, Corning, NY (US);
Viktoria Pshenitsyna, St. Petersburg, RU;
Pawan Saxena, Corning, NY (US);
Paul M. Schermerhorn, Painted Post, NY (US);
Corning Incorporated, Corning, NY (US);
Abstract
The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.