The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Jan. 23, 2002
Leslie Salem, Haifa, IL;
Eitan Zeiler, Haifa, IL;
Omri Govrin, Misgav, IL;
Electro-Optics Research & Development Ltd., Haifa, IL;
Abstract
A method and system for measuring remotely the surface temperature of a silicon wafer and layers, without the need to know the surface emissivity. The surface temperature is measured in-situ and in real-time during a high-temperature process, in a vacuum system, by using the linear polarization property of radiation. A blackbody source is heated to various, known temperatures, and provides radiation that impinges on the silicon surface and is reflected from it together with a self-emitted component. This combined reflected radiation is polarized and filtered to an appropriate wavelength, and observed with an imaging camera. Pairs of orthogonally polarized images of the surface are obtained for a set silicon surface temperature and for each blackbody temperature. The pairs of images are analyzed, pixel by pixel, to obtain a null polar level indicative of the surface temperature. The system is provided with means for rapid variation of the blackbody temperature, thus allowing measurement of rapidly changing silicon surface temperatures.