The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Dec. 22, 2004
Pingshan Wang, Carbondale, IL (US);
Edwin C. Kan, Saratoga, CA (US);
Pingshan Wang, Carbondale, IL (US);
Edwin C. Kan, Saratoga, CA (US);
Cornell Research Foundation, Inc., Ithaca, NY (US);
Abstract
To facilitate high frequency operation, transmission lines for high-speed interconnect applications in CMOS technologies are loaded with patterned permalloy or other ferromagnetic material films. Patterning the permalloy films as a plurality of segments results in control of the domain structures in the permalloy segments such that ferromagnetic resonance (FMR) effects are eliminated and eddy-current effects are reduced, thereby allowing operation of the transmission lines at frequencies of 20 GHz or higher. In addition, the patterned permalloy reduces the magnetic field coupling between two adjacent transmission lines. A novel ferromagnetic thin film characterization method is also employed to measure the microwave permeability of the patterned permalloy films and verify their high frequency operational characteristics.