The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Sep. 30, 2005
Applicants:
Young-keun Kim, Seoul, KR;
Byong-sun Chun, Seoul, KR;
Jang-roh Rhee, Seoul, KR;
Jae-youn Hwang, Seoul, KR;
Inventors:
Young-Keun Kim, Seoul, KR;
Byong-Sun Chun, Seoul, KR;
Jang-Roh Rhee, Seoul, KR;
Jae-Youn Hwang, Seoul, KR;
Assignee:
Korea University Foundation, , KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
Abstract
A magnetic tunnel junction (MTJ) structure for a magnetic random access memory (MRAM) is provided. Specifically, an MTJ structure with an amorphous CoFeSiB or NiFeSiB free layer is provided. The free layer is a CoFeSiB single layer, a NiFeSiB single layer, a CoFeSiB/Ru/CoFeSiB SAF layer, or a NiFeSiB/Ru/NiFeSiB SAF layer.