The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Aug. 16, 2002
Applicants:
Karl-ernst Ehwald, Frankfurt, DE;
Holger Rücker, Bad Saarow, DE;
Bernd Heinemann, Frankfurt, DE;
Inventors:
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A lateral CMOS-compatible RF-DMOS transistor (RFLDMOST) with low 'on' resistance, characterised in that disposed in the region of the drift space () which is between the highly doped drain region () and the control gate () and above the low doped drain region LDDR () of the transistor is a doping zone () which is shallow in comparison with the penetration depth of the source/drain region (), of inverted conductivity type to the LDDR () (hereinafter referred to as the inversion zone) which has a surface area-related nett doping which is lower than the nett doping of the LDDR () and does not exceed a nett doping of 8E12 At/cm2.