The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2007

Filed:

May. 19, 2004
Applicants:

Takayuki Ogura, Nara, JP;

Hiroshi Iwata, Nara-ken, JP;

Akihide Shibata, Nara, JP;

Inventors:

Takayuki Ogura, Nara, JP;

Hiroshi Iwata, Nara-ken, JP;

Akihide Shibata, Nara, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka-Shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor storage element has a memory function body on opposite sides of a gate electrode formed on a semiconductor substrate. Each end of source/drain regions is located in the semiconductor substrate just under the memory function body and offset with respect to an edge of the gate electrode in a gate length direction to improve efficiency of electric charge injection into the memory function body. A storage state in the memory function body is found by detecting a amount of current between the source/drain regions, which current changes depending on the amount of the electric charge retained in the charge retention portion.


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