The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Sep. 07, 2006
Lee-yin V. Chen, Goleta, CA (US);
Lee-Yin V. Chen, Goleta, CA (US);
Agile RF, Inc., Goleta, CA (US);
Abstract
Ferroelectric thin film devices including a passivation structure to reduce or control a leakage path between two electrodes and along an interface between a ferroelectric thin film layer and a passivation layer are described. Methods for fabricating such devices are also disclosed. The passivation structure includes a first passivation layer that includes an opening exposing a portion of the ferroelectric thin film layer allowing a second passivation layer to contact the thin film layer through the opening. In an exemplary embodiment, the opening is a rectangular ring surrounding an active region of a capacitor. In another exemplary embodiment, the second passivation layer also contacts the second electrode, a portion of which is also exposed through the opening. In another exemplary embodiment, current flows along the interface between the thin film layer and the passivation layer in an integrated resistor.