The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Feb. 13, 2004
Applicants:
Zhiyuan Cheng, Cambridge, MA (US);
Eugene A. Fitzgerald, Windham, NH (US);
Dimitri Antoniadis, Newton, MA (US);
Inventors:
Zhiyuan Cheng, Cambridge, MA (US);
Eugene A. Fitzgerald, Windham, NH (US);
Dimitri Antoniadis, Newton, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
Abstract
A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the channel portion. A source region abuts the gate region at one end, and a drain diffusion region abuts the gate region at the other end.