The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Dec. 19, 2003
Tsuyoshi Nakano, Ichihara, JP;
Noboru Fukuhara, Tsukuba, JP;
Tsuyoshi Nakano, Ichihara, JP;
Noboru Fukuhara, Tsukuba, JP;
Sumitomo Chemical Company Limited, Tokyo, JP;
Sumika Epi Solution Company, Ltd., Tokyo, JP;
Abstract
A compound semiconductor epitaxial substrate having a pseudomorphic high electron mobility field effect transistor structure which comprises an InGaAs layer as a channel layerand an InGaP layer containing n-type impurities as a front side electron supplying layer, wherein an electron mobility in the InGaAs layer at room temperature (300 K) has become 8000 cm/V·s or more by growing an epitaxial substrate having a pseudomorphic HEMT structure with an In composition of the channel layerincreased. Front side spacer layersandbetween the channel layerand the front side electron supplying layermay also be InGaP layers.