The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Jan. 30, 2004
Takao Saito, Nagoya, JP;
Yukinori Nakamura, Nagoya, JP;
Yoshimasa Kondo, Nagoya, JP;
Naoto Ohtake, Yokosuka, JP;
Takao Saito, Nagoya, JP;
Yukinori Nakamura, Nagoya, JP;
Yoshimasa Kondo, Nagoya, JP;
Naoto Ohtake, Yokosuka, JP;
NGK Insulators, Ltd., Nagoya, JP;
Abstract
Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the substrate. The substrate is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space and a pulse voltage is applied on the substrate without substantially applying a direct bias voltage on the substrate to form the thin film on the inner wall surface.