The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Jan. 09, 2004
Mao-yi Chang, Taipei, TW;
Mao-Yi Chang, Taipei, TW;
AU Optronics Corp., Hsinchu, TW;
Abstract
In a method of forming a polysilicon layer on a substrate, a first embodiment comprises: doping inert gas into the substrate to form a plurality of pores in the substrate; depositing a buffer later on the substrate; depositing an amorphous silicon layer on the buffer layer; and heating the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer. A second embodiment comprises: depositing a first buffer layer on a substrate; doping inert gas into the first buffer layer to form a plurality of pores in the first buffer layer; depositing a second buffer layer on the first buffer layer; depositing an amorphous silicon layer on the second buffer layer; and heating the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer.