The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Jun. 02, 2004
Tsutomu Ogihara, Niigata-ken, JP;
Takeshi Asano, Niigata-ken, JP;
Motoaki Iwabuchi, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Tsutomu Ogihara, Niigata-ken, JP;
Takeshi Asano, Niigata-ken, JP;
Motoaki Iwabuchi, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Abstract
It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing. The present invention provides a silicone resin for preventing reflection comprising an organic group comprising a carbon-oxygen single bond and/or a carbon-oxygen double bond; a light-absorbing group; and a silicon atom whose terminal end or ends are Si—OH and/or Si—OR. It also provides an antireflective film material comprising this silicone resin (A) for preventing reflection film, an organic solvent (B) and an acid generator (C).