The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Nov. 15, 2004
Applicant:
Sunhom Paak, San Jose, CA (US);
Inventor:
Sunhom Paak, San Jose, CA (US);
Assignee:
Xilinx, Inc., San Jose, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A cost efficient nonvolatile memory cell may include an inverter, an access gate coupled to the inverter for controlling access to the memory cell, and a control gate. The inverter may include a floating gate at an input of the inverter, the floating gate formed in a first polysilicon layer, and a tunnel window formed in a tunnel oxide area, wherein the tunnel oxide area is covered by at least a portion of the floating gate. The control gate may control charge on the floating gate, and may be formed in a second polysilicon layer, wherein the second polysilicon layer is above the first polysilicon layer.