The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Oct. 28, 2005
John Y. Fong, Allen, TX (US);
Anand Seshadri, Plano, TX (US);
Sung-wei Lin, Plano, TX (US);
Sudhir Kumar Madan, Richardson, TX (US);
Jarrod Eliason, Colorado Springs, CO (US);
John Y. Fong, Allen, TX (US);
Anand Seshadri, Plano, TX (US);
Sung-Wei Lin, Plano, TX (US);
Sudhir Kumar Madan, Richardson, TX (US);
Jarrod Eliason, Colorado Springs, CO (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Systems and methods fatigue a ferroelectric memory device. Within a single cycle, a group of selected ferroelectric memory cells is fatigued by reading a first logical value from the cells while also writing a second logical value to the memory cells. The first logical value is temporarily stored into latches of sense amplifiers associated with the selected memory cells in order to decipher logical values. Subsequently, the first logical value is written back to the ferroelectric memory cells and a cycle of the fatigue operation is ended.