The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2007

Filed:

Nov. 28, 2005
Applicants:

Takeshi Yoshida, Higashi-Hiroshima, JP;

Atsushi Iwata, Higashi-Hiroshima, KR;

Mamoru Sasaki, Higashi-Hiroshima, JP;

Kunihiko Gotoh, Kawasaki, JP;

Inventors:

Takeshi Yoshida, Higashi-Hiroshima, JP;

Atsushi Iwata, Higashi-Hiroshima, KR;

Mamoru Sasaki, Higashi-Hiroshima, JP;

Kunihiko Gotoh, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a class AB CMOS output circuit provided with a CMOS circuit including first P and N channel transistors and operating by a predetermined operating current I, a replica circuit is formed on a semiconductor substrate of the CMOS circuit, and includes a second P channel transistor having a size equal or similar to that of the first P channel transistor, and a second N channel transistor having a size equal or similar to that of the first N channel transistor. A bias voltage supply allows the second P and N channel transistors to operate based on a reference current Iref corresponding to the operating current I, applies a first bias voltage as applied to the second P channel transistor to the first P channel transistor, and applies a second bias voltage as applied to the second N channel transistor to the first N channel transistor.


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