The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Jul. 16, 2002
Charles M. Lieber, Lexington, MA (US);
Xiangfeng Duan, Somerville, MA (US);
Yi Cui, Union City, CA (US);
Yu Huang, Cambridge, MA (US);
Mark Gudiksen, Watertown, MA (US);
Lincoln J. Lauhon, Boston, MA (US);
Jianfang Wang, Goleta, CA (US);
Hongkun Park, Lexington, MA (US);
Qingqiao Wei, Corvallis, OR (US);
Wenjie Liang, Somerville, MA (US);
David C. Smith, Reading, GB;
Deli Wang, Cambridge, MA (US);
Zhaohui Zhong, Cambridge, MA (US);
Charles M. Lieber, Lexington, MA (US);
Xiangfeng Duan, Somerville, MA (US);
Yi Cui, Union City, CA (US);
Yu Huang, Cambridge, MA (US);
Mark Gudiksen, Watertown, MA (US);
Lincoln J. Lauhon, Boston, MA (US);
Jianfang Wang, Goleta, CA (US);
Hongkun Park, Lexington, MA (US);
Qingqiao Wei, Corvallis, OR (US);
Wenjie Liang, Somerville, MA (US);
David C. Smith, Reading, GB;
Deli Wang, Cambridge, MA (US);
Zhaohui Zhong, Cambridge, MA (US);
President and Fellows of Harvard College, Cambridge, MA (US);
Abstract
The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.