The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Aug. 22, 2006
Applicants:
Thomas W. Tombler, Goleta, CA (US);
Brian Y. Lim, Simi Valley, CA (US);
Inventors:
Thomas W. Tombler, Goleta, CA (US);
Brian Y. Lim, Simi Valley, CA (US);
Assignee:
Atomate Corporation, Simi Valley, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
During fabrication of single-walled carbon nanotube transistor devices, a porous template with numerous parallel pores is used to hold the single-walled carbon nanotubes. The porous template or porous structure may be anodized aluminum oxide or another material. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed and extend into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications.