The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Aug. 16, 2005
Saichirou Kaneko, Muko, JP;
Kazuyuki Sawada, Hirakata, JP;
Toshihiko Uno, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
An ion-through regionis provided as a first opening in a passivation filmon a source electrodeand a drain electrode. The passivation filmis coated with a sealing resin to package the semiconductor device. At this point, the ion-through regionis filled with the sealing resin to put the sealing resin into direct contact with the source electrodeand the drain electrode. With this structure, movable ions accumulated at an interface of the sealing resin with the passivation filmin a high temperature and high humidity atmosphere are discharged to the source electrodeand the drain electrodevia the ion-through regionand thus do not influence an N-type extended drain region. Therefore, the drain breakdown voltage can be improved.