Semiconductor substrate and semiconductor device fabrication method

Abstract

The semiconductor substrate comprises a first monitor partformed in a first region near a center of a semiconductor wafer, which includes a first element having a first electrodeformed over the semiconductor waferwith a first insulation filmformed therebetween, and a first electrode padelectrically connected to the first electrode; and a second monitor partformed in a second region different from the first region, which includes a second element having a second electrodeformed on the semiconductor waferwith a second insulation filmformed therebetween, and a second electrode padelectrically connected to the second electrode. When electric breakdown has taken place in both the first monitor partand the second monitor part, it can be judged that too large static electricity was generated upon the release of the surface protection film. When electric breakdown has taken place in either of the first monitor partand the second monitor part, the electric breakdown has taken place due to factors other than the static electricity generated upon the release of the surface protection film. When electric breakdown has taken place in neither of the first monitor partand the second monitor part, it can be judged that too large static electricity was generated upon the release of the surface protection film. Thus, factors for defects of semiconductor devices can be identified, which leads to improved quality of the semiconductor devices.