The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Mar. 29, 2004
Yong-chan Keh, Suwon-si, KR;
Mun-kue Park, Suwon-si, KR;
Doo-sik Shin, Suwon-si, KR;
Yu-sik Kim, Suwon-si, KR;
Yong-Chan Keh, Suwon-si, KR;
Mun-Kue Park, Suwon-si, KR;
Doo-Sik Shin, Suwon-si, KR;
Yu-Sik Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A transistor-outline TO-can type optical module includes a stem, a sub-mount arranged in the stem and a laser diode (LD) is mounted in the sub-mount. A photo diode (PD), which has an inclined light incident surface, converts light emitted from the LD to current. A plurality of leads is extended through the stem while electrically being connected to the sub-mount. The inclined light incident surface of the PD permits that sufficient monitoring of photocurrent can be obtained and a p-side up bonding of a p-type electrode is allowed. Thus, the SMSR of the LOB is increased. A bias-tee is built in the TO-can to reduce heat caused by DC current and to increase opto-electric efficiency while suppressing an increase in the temperature of an LD chip.